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| SI1413EDH New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.115 @ VGS = -4.5 V -20 0.155 @ VGS = -2.5 V 0.220 @ VGS = -1.8 V ID (A) -2.9 -2.4 -2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D Marking Code YY BA XX G Lot Traceability and Date Code Part # Code 3 kW D 2 5 D G 3 4 S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS -1.4 1.56 0.81 -55 to 150 -2.0 -8 -0.9 1.0 0.52 W _C -1.6 A Symbol VDS VGS 5 secs Steady State -20 "12 Unit V -2.9 -2.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71396 S-03186--Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W C/W 1 SI1413EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = -16 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.9 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -2.4 A VGS = -1.8 V, ID = -1.0 A Forward Transconductancea gfs VSD VDS = -10 V, ID = -2.9 A IS = -1.4 A, VGS = 0 V -4 0.095 0.125 0.180 6 -0.80 -1.1 0.115 0.155 0.220 S V W -0.45 "1.5 "10 -1 -5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -2.9 A 5.6 1.2 1.2 0.75 1.6 3.9 3.9 1.1 2.3 5.5 5.5 ms m 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 Gate Current vs. Gate-Source Voltage 1,000 I GSS - Gate Current (mA) 6 I GSS - Gate Current (mA) 100 TJ = 150_C 4 10 1 0.1 TJ = 25_C 2 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71396 S-03186--Rev. A, 05-Mar-01 2 SI1413EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 2.5 V 8 TC = -55_C 6 I D - Drain Current (A) 2V 25_C Vishay Siliconix Transfer Characteristics 6 I D - Drain Current (A) 125_C 4 4 1.5 V 2 2 1V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1000 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 800 Ciss 600 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V VGS = 4.5 V 400 0.1 200 Coss Crss 0 4 8 12 16 20 0.0 0.0 0 1.5 3.0 4.5 6.0 7.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = -2.9 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 VGS = 4.5 V ID = -2.9 A 1.2 2 1.0 1 0.8 0 0.0 1.5 3.0 4.5 6.0 7.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71396 S-03186--Rev. A, 05-Mar-01 www.vishay.com 3 SI1413EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) 0.3 ID = -2.9 A 1 0.2 0.1 0.1 0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 28 0.2 Power (W) 21 0.1 14 0.0 7 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71396 S-03186--Rev. A, 05-Mar-01 SI1413EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71396 S-03186--Rev. A, 05-Mar-01 www.vishay.com 5 |
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